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近年来,世界各国由于电子技术的发展,对新型材料及新型器件提出了新的要求。离子注入技术是当前发展电子材料及器件中的关键手段之一,各先进工业国家均采用该技术发展新型器件及新型材料。如所周知,离子注入技术具有掺杂均匀性好、不受表面氧化层的影响、注入量可精确控制、横向扩散小等优点。更重要的是,从原理上离子注入到各种材料,可不受化学
In recent years, due to the development of electronic technology in various countries in the world, new requirements have been set for new materials and new devices. Ion implantation technology is currently one of the key technologies in the development of electronic materials and devices. All advanced industrial countries have adopted this technology to develop new devices and new materials. As we all know, ion implantation technology with good doping uniformity, free from the influence of the surface oxide layer, the injection can be precisely controlled, the advantages of small lateral diffusion. More importantly, from the principle of ion implantation into a variety of materials, not chemical