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利用直流磁控溅射法,在玻璃衬底和Si片衬底上分别沉积出了Ti-Al共掺杂ZnO透明导电薄膜(TAZO),并对这两种衬底上的薄膜的应力、结构和光电性能进行了对比研究。结果表明:玻璃衬底和Si片衬底上沉积的TAZO薄膜均为具有c轴择优取向的六角纤锌矿结构多晶薄膜,Si片衬底的TAZO薄膜的导电性能优于玻璃衬底上的TAZO薄膜,53 min沉积出的两种衬底上的TAZO薄膜都具有最小电阻率,Si片衬底上薄膜的最小电阻率为5.07×10-4Ω.cm,玻璃衬底上薄膜的最小电阻率为5.48×10-4Ω.cm;玻璃衬底上的TAZO薄膜的应力小于Si片衬底上TAZO薄膜的应力。玻璃衬底上沉积TAZO薄膜样品的可见光透过率均大于90%,两种衬底上沉积TAZO薄膜的折射率都在2.0左右。
Ti-Al co-doped ZnO transparent conductive film (TAZO) was deposited on the glass substrate and the Si substrate by DC magnetron sputtering. The stress and structure of the films on the two substrates And optoelectronic properties of a comparative study. The results show that the TAZO thin films deposited on glass substrate and Si substrate are all hexagonal wurtzite structured polycrystalline films with c-axis preferred orientation. The conductivity of TAZO films on Si substrate is better than that on glass substrate TAZO film, 53 min deposition of TAZO film on the two substrates have the smallest resistivity, the minimum resistivity of the Si film substrate film is 5.07 × 10-4Ω.cm, the minimum resistivity of the film on the glass substrate Is 5.48 × 10 -4 Ω · cm; the stress of the TAZO film on the glass substrate is smaller than the stress of the TAZO film on the Si film substrate. The visible light transmittance of the deposited TAZO film on the glass substrate is more than 90%, and the refractive index of the deposited TAZO film on both substrates is about 2.0.