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研究了交替型相移掩模及离轴照明对65nm分辨率ArF浸没式光刻的影响.在3/4环形照明和3/4四极照明方式下,分别选用传统掩模和交替型相移掩模,研究65nm线宽的密集线条、半密集线条、孤立线条在较大的曝光系统参数范围内,对光刻工艺窗口的改善。并对在不同的照明方式、掩模结构下获得的工艺窗口进行了比较.结果表明:①在较大焦深(DOF)范围内,满足光刻性能要求可以有较大范围的曝光系统参数配置;②相对于传统照明和传统掩模,采用交替型相移掩模或者离轴照明,焦深均可提高1000～1500.
The effects of alternating phase shift mask and off-axis illumination on ArF immersion lithography with 65nm resolution were studied.Under the 3/4 quadrupole illumination and 3/4 quadrupole illumination modes, traditional masks and alternate phase shifts Mask, study 65nm linewidth dense lines, semi-dense lines, isolated lines in the larger exposure system parameters within the range of lithography process window improvement. The results show that: (1) Within the range of larger DOF, satisfying the requirements of lithography performance can have a large range of exposure system parameter configuration ; ② Compared with the traditional lighting and traditional mask, using alternating phase shift mask or off-axis illumination, focal depth can be increased by 1000 ~ 1500 .