Room-Temperature Processed Amorphous ZnRhCuO Thin Films with p-Type Transistor and Gas-Sensor Behavi

• 作 者: Bojing Lu Rumin Liu Siqin Li Rongkai Lu Lingxiang Chen Zhizhen Ye Jianguo Lu
• 机 构: State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang Unive
• 出 处: 中国物理快报（英文版）
• 发表日期: 2020年9期

We examine an amorphous oxide semiconductor (AOS) of ZnRhCuO.The a-ZnRhCuO films are deposited at room temperature,having a high amorphous quality with smooth surface,uniform thickness and evenly distributed elements,as well as a high visible transmittance above 87％ with a wide bandgap of 3.12 eV.Using a-ZnRhCuO films as active layers,thin-film transistors (TFTs) and gas sensors are fabricated.The TFT behaviors demonstrate the p-type nature of a-ZnRhCuO channel,with an on-to-off current ratio of ～1 × 103 and field-effect mobility of 0.079cm2V-1s-1.The behaviors of gas sensors also prove that the a-ZnRhCuO films are of p-type conductivity.Our achievements relating to p-type a-ZnRhCuO films at room temperature with TFT devices may pave the way to practical applications of AOSs in transparent flexible electronics.