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研究了InP双异质结双极晶体管(DHBT)的能带结构对集电极电容的影响,解决了传统方法不能准确提取InPDHBT集电极电容的问题.考虑了基极-发射极和集电极-发射极引线间的交叠电容,并从物理上区分了InPDHBT的本征电阻、外部电阻与寄生电阻,建立了一个基于物理的InP基DHBT小信号模型.同时提出了一套直接提取模型参数的方法,该方法无需引入数学优化,具有清晰的物理意义.提取的结果在很宽的偏置范围内准确地拟合了器件特性,验证了模型的准确性与提取方法的有效性.
The effect of the energy band structure of InP double heterojunction bipolar transistor (DHBT) on the collector capacitance has been studied, which solves the problem that the traditional method can not accurately extract the collector capacitance of InPDHBT. Considering the influence of the base-emitter and collector-emitter And the overlap capacitance between the lead and the lead, and physically distinguishes the intrinsic resistance, external resistance and parasitic resistance of InPDHBT, a physically based InP-based DHBT small-signal model is established. At the same time, a set of methods for directly extracting model parameters , The method does not need to introduce mathematical optimization and has a clear physical meaning.Extracted results accurately fit the device characteristics within a wide range of bias and verify the accuracy of the model and the effectiveness of the extraction method.