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本文报导了1.3μm 波长范围的激光二极管及其高速激励电路首次成功地集成在一起的情况。在这种光电子集成电路中,利用在同一衬底上生长的 InGaAsP 和 InP 液相外延层制作了隐埋异质结激光二极管和三个异质结双极晶体管。因异质结构的发射极效率较高,故做出的异质结双极晶体管具有高速性能。结果证实了这种新型的光电集成电路可在频率高达1.6GHz下工作并观测到调制的激光器输出。
This paper reports the first successful integration of a 1.3μm wavelength laser diode with its high-speed excitation circuit. In this optoelectronic integrated circuit, a buried heterojunction laser diode and three heterojunction bipolar transistors are fabricated using InGaAsP and InP liquid phase epitaxial layers grown on the same substrate. Heterojunction bipolar transistors are made with high-speed performance due to the higher emitter efficiency of the heterostructure. The results confirm that this new type of optoelectronic integrated circuit can operate at frequencies up to 1.6 GHz and observe the modulated laser output.