A revew of in situ transmission electron microscopy study on the switching mechanism and packaging r

• 作 者: Xin Yang Chen Luo Xiyue Tian F
• 机 构: ShanghaiKeyLaboratoryofMultidimensionalInformationProcessing,ChangjiangElectronicsIntegratedCircuit（
• 出 处: 半导体学报:英文版
• 发表日期: 2021年1期
• 关键词: MEMORY transmission electron microscopy in situ characterization PACKAGE RELIABI
• 基金项目: the Projects of Science and Technology Commission of Shanghai Municipality(19ZR1473800 and 14DZ2260800),the Shanghai Rising-Star Program(17QA1401400),Young Elite Scientists Sponsorship Program by CAST

Non-volatile memory(NVM)devices with non-volatility and low power consumption properties are important in the data storage field.The switching mechanism and packaging reliability issues in NVMs are of great research interest.The switching process in NVM d