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开展了变焦彩色CCD成像系统的激光外场干扰实验,测得了半导体激光(750 nm)对变焦距(17~187 mm)彩色CCD相机的干扰效果;同时利用典型的激光干扰CCD模型,完成了对实验结果的验证与理论分析。理论与实验结果表明:750 nm激光对彩色CCD成像系统的干扰效果明显,CCD靶面出现了明显的光饱和和串扰现象;在激光辐照条件相同情况下,光学系统焦距f越大,被光阑截断的激光就越少,到靶的激光功率密度就越高,CCD靶面的光饱和面积就越大;光学系统焦距f为17 mm时,CCD靶面的光饱和面积为0.33 mm×0.29 mm,而当光学系统焦距f增大至120 mm时,CCD靶面的光饱和面积为1.8 mm×1.2 mm。仿真结果与实验结果基本一致,证明了理论模型的正确性。研究结果将对CCD器件的实际应用具有一定的指导意义。
A laser field interference experiment was carried out in a variable color CCD imaging system. The interference effect of a semiconductor laser (750 nm) on a color CCD camera with variable focal length (17 ~ 187 mm) was measured. At the same time, a typical laser interference CCD model was used to complete the experiment Verification and theoretical analysis of the results. The theoretical and experimental results show that the interference effect of 750 nm laser on color CCD imaging system is obvious, and the light saturation and crosstalk appear on the CCD target surface. Under the same laser irradiation conditions, the larger the focal length f of the optical system, The less the laser is cut off, the higher the laser power density to the target, the larger the light saturation area of the CCD target. When the optical system focal length f is 17 mm, the light saturation area of the CCD target is 0.33 mm × 0.29 mm. When the focal length f of the optical system is increased to 120 mm, the light-saturated area of the CCD target surface is 1.8 mm × 1.2 mm. The simulation results are basically consistent with the experimental results, which proves the correctness of the theoretical model. The research results will have some guiding significance for the practical application of CCD devices.