High efficiency,large-active-area superconducting nanowire single-photon detectors

• 作 者: 顾敏 张蜡宝 康琳 赵清源 郏涛 万超 徐睿莹 杨小忠 吴培亨 张永 夏金松
• 机 构: Research Institute of Superconductor Electronics(RISE),School of Electronic Science and Engineering,
• 出 处: Chinese Physics B
• 发表日期: 2015年06期
• 关键词: jitter nitride lithography thermally fabricate spacing thick fitting fabrication

Niobium nitride superconducting nanowire single-photon detectors were fabricated on thermally oxidized silicon substrates with large active areas of 30 μm× 30 μm.To achieve non-constricted detectors,we improved the film growth and electron beam lithography process to fabricate uniform 100-nm wide Nb N nanowires with a fill factor of 50%.The devices showed 72.4% system detection efficiency(SDE) at 100-Hz dark count rate(DCR) and 74-ps timing jitter,measured at the fiber communication wavelength of 1550 nm.The highest SDE which is 81.2% when the DCR is ～ 700 c/s appears at the wavelength of 1650 nm.

Niobium nitride superconducting nanowire single-photon detectors were fabricated on thermally oxidized silicon substrates with large active areas of 30 μm × 30 μm. To achieve non-constricted detectors, we improved the film growth and electron beam lithography process to fabricate uniform 100-nm wide Nb N nanowires with a fill factor of 50%. Devices showed 72.4% system detection efficiency (SDE) at 100-Hz dark count rate (DCR) and 74-ps timing jitter, measured at the fiber communication wavelength of 1550 nm. highest SDE which is 81.2% when the DCR is ~ 700 c / s appears at the wavelength of 1650 nm.