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针对GaN基发光二极管中p-GaN与透明导电薄膜ITO之间的接触进行研究,尝试找出透明导电层ITO的优化制程条件。将在不同氧流量、ITO厚度及退火温度下制备的透明电极ITO薄膜应用于GaN基发光二极管,来增加电流扩展,减小ITO与p-GaN欧姆接触电阻,降低LED工作电压及提高透过率、增强LED发光亮度。将ITO薄膜应用于218μm×363μm GaN基发光二极管LED,分析其在20 mA工作电流条件下正向电压和光输出功率的变化,在优化条件下制得的蓝光LED在直流电流20 mA下的正向电压3.23 V,光输出效率为23.25 mW。
The GaN-based light-emitting diodes in the p-GaN and transparent conductive film ITO contact between the study to try to find the transparent conductive ITO optimization process conditions. ITO films with different thickness and annealing temperature are used in GaN-based light-emitting diodes to increase the current spreading, reduce the ohmic contact resistance between ITO and p-GaN, reduce the working voltage of LED and increase the transmittance , Enhance LED brightness. The ITO film was applied to a 218μm × 363μm GaN-based LED. The forward voltage and output power of the LED under the 20 mA operating current were analyzed. Under the optimal conditions, The voltage is 3.23 V and the light output efficiency is 23.25 mW.