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近年来,不少科技工作者从结晶学方面对Ⅱ—Ⅵ族化合物异质结制作技术进行深入地研究,制成一些具有优良性能的从可见光到近红外范围的光电器件,并获得广泛应用。一般说来,形成异质结的条件是构成异质结的材料应具有良好的相容性,要求异质结界面处原子,排列相似。但实际上由于材料的晶格常数、电子亲和能及热膨胀系数等的差异,还有制作工艺质量问题,常常在异质结界面产生大量的悬挂键和缺陷,造成结界面能带的不连续,对异质结性能产生严重影响。我们用真空蒸发方法,以Ⅱ—Ⅵ族化合物ZnSe、ZnTe及CdTe等为材料,制成ZnSe—(Zn_(1-x)Cd_xTe)_(1-y)(In_2Te_3)_y(x=0.2～0.5,y=0.02～0.07)薄膜异质结。用这种异质结作摄象管靶或其它光电器件。从结晶学来看,上述三种材料都是闪锌矿结构,理论上可以形成异质结,但由于晶格失配率大,是一种晶格不匹配异质结。本文简单叙述并讨论这种异质结的一些光电特性。
In recent years, many scientists from the crystallization of Ⅱ-Ⅵ compound heterojunction production technology in-depth study made into some with excellent performance from the visible to near infrared range of optoelectronic devices, and widely used. In general, the conditions for the formation of heterojunctions are that the materials that make the heterojunctions should have good compatibility and require that the atoms in the heterojunction interface be arranged in a similar manner. However, in fact, due to the difference of lattice constant, electron affinity, thermal expansion coefficient and the quality of the fabrication process, a large number of dangling bonds and defects are often generated at the interface of the heterojunction, resulting in the discontinuity of the energy band at the interface , Have a serious impact on heterojunction performance. We prepared the ZnSe- (Zn_ (1-x) Cd_xTe) _ (1-y) (In_2Te_3) _y (x = 0.2 ~ 0.5) by the vacuum evaporation method using ZnSe, ZnTe and CdTe as the materials, , y = 0.02 ~ 0.07) thin film heterojunction. Use this heterojunction as a tube target or other optoelectronic device. Crystallography point of view, the above three materials are sphalerite structure, in theory, can form heterojunction, but because of lattice mismatch rate is a lattice mismatch heterojunction. This article briefly describes and discusses some of the photoelectric properties of this heterojunction.