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本文以一种综合的方法,包括不同偏置下器件的小信号S参数测量与模拟,直流I-V特性测量与模拟等,在准静态假设的基础上建立了GaAsMESFET的大信号综合模型,并在模型中考虑了栅正向导通效应和栅漏反向击穿效应。实验结果表明,在8.0GHz下,计算机模拟和实际测量的FET输出功率饱和特性符合得比较好。在7.5～8.5GHz带宽内,1dB增益压缩下大信号模型设计放大器的最大输出功率为17.2dBm,而小信号设计放大器的最大输出功率为15.4dBm。通过对FET输入、输出电压、电流波形的分析,初步讨论了FET输出功率饱和的原因。
Based on the quasi-static assumption, a large-signal integrated model of GaAsMESFET is built based on a comprehensive method, including measurement and simulation of small-signal S-parameters and DC-IV characteristics under different biasing devices. Consider the gate forward conduction effect and gate leakage reverse breakdown effect. Experimental results show that at 8.0GHz, computer simulation and actual measured FET output power saturation characteristics in good agreement. In 7.5 ~ 8.5GHz bandwidth, the maximum output power of large-signal model design amplifier under 1dB gain compression is 17.2dBm, while the maximum output power of small signal design amplifier is 15.4dBm. Through the FET input, output voltage, current waveform analysis, the initial discussion of the FET output power saturation reasons.