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概述了用于制备碲镉汞焦平面列阵的金属有机汽相外延生长(MOVPE)技术的一些主要发展步骤。原始有机金属纯度的提高,已可以使本底施主浓度达到10~(14)cm~(-3)的程度,同时还允许用施主或受主控制反向掺杂。用内部扩散多层方法(IMP)有可能获得合金的大面积均匀性。然而,为了避免在混成结构上出现热应力,必须将焦平面列阵生长在Si衬底上。介绍了从一个256×256元中波红外列阵上获得的初步结果,还介绍了有关光学现场监视的结果。这些结果将形成今后改进外延控制方法的基础。
Some major development steps of the metal-organic vapor-phase epitaxy (MOVPE) technology for the preparation of CdTe Hg planar arrays are outlined. The increase of the purity of the original organometallics can make the background donor concentration reach the level of 10 ~ (14) cm ~ (-3), and at the same time, allow the donor or acceptor to control the reverse doping. It is possible to obtain the large area uniformity of the alloy by the internal diffusion multilayer method (IMP). However, in order to avoid the occurrence of thermal stress on the hybrid structure, a focal plane array must be grown on the Si substrate. The preliminary results obtained from a 256 × 256-element medium-wave infrared array are presented, as well as the results of optical field monitoring. These results will form the basis for future methods of improving epitaxy control.