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6H-SiC wafters were irradiated with He ions to a dose of 3×1016 He+cm-2 at 600 K. Post-irradiation, the samples were annealed in vacuum at different temperatures from 873 to 1473 K for isochronal annealing (30 min). Lattice damage and evolution in 6H-SiC under He+ ion irradiation have been investigated by the combination of Rutherford backscattering in channeling geometry, Raman spectroscopy, UV-visible spectroscopy and transmission electron microscopy. Thermal annealed He irradiated 6H-SiC exhibited an increase in damage or reverse annealing behavior in the damage peak region, as shown in Fig. 1. The reverse annealing effect was found due to the nucleation and growth of He bubbles. This finding was consistent with the TEM observation, as shown in Fig. 2. The thermal annealing brought some recovery of lattice defects and therefore the intensities of Raman peaks increased and the absorption coefficient decreased with increasing annealing temperature, as shown in Fig. 3(a) and (b).
6H-SiC wafters were irradiated with He ions to a dose of 3 × 10 16 He + cm-2 at 600 K. Post-irradiation, the samples were annealed in vacuum at different temperatures from 873 to 1473 K for isochronal annealing (30 min) . Lattice damage and evolution in 6H-SiC under He + ion irradiation have been investigated by the combination of Rutherford backscattering in channeling geometry, Raman spectroscopy, UV-visible spectroscopy and transmission electron microscopy. Thermal annealed Heradiated 6H-SiC implantation an increase in damage or reverse annealing behavior in the damage peak region, as shown in Fig. 1. The reverse annealing effect was found due to the nucleation and growth of He bubbles. This finding was consistent with the TEM observation, as shown in Fig. 2. The thermal annealing brought some recovery of lattice defects and therefore the intensities of Raman peaks increased and the absorption coefficient decreased with increasing annealing temperature, as shown in Fig. 3 (a) and (b).