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本文发展了一种研究a－Si：HTFT电流一电压特性的新方法。基于局域态电荷密度解析统一模型，提出并深入分析了沟道区有效温度参数的概念，并由此推导出了ta－Si：HTFT电流－电压特性的解析表达式。其理论值与实验值符合很好。该模型可用于a－Si：HTFT静态特性分析及其电路优化。
In this paper, we develop a new method to study the current-voltage characteristic of a-Si: HTFT. Based on the uniform model of local charge density analysis, the concept of effective temperature parameter in channel region is proposed and analyzed. And the analytic expression of current-voltage characteristic of ta-Si: HTFT is deduced. The theoretical value is in good agreement with the experimental value. The model can be used for a-Si: HTFT static analysis and circuit optimization.