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A series of rare earth ions doped CdSiO3:RE3+(RE=Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho,Er, Tm, Yb, Lu) multi-color long-lasting phosphorescencephosphors are prepared by the conventional high-temperature solid-state method. The results of XRDmeasurement indicate that the products fired under 1050℃for 3 h have a good crystallization without any detectableamount of impurity phase. Rare earth ions doped CdSiO3phosphors possess excellent luminescence properties. When rare earth ions such as Y3+, La3+, Gd3+, Lu3+, Ce3+, Nd3+, Ho3+Er3+, Tm3+ and Yb3+ are introduced into the CdSiO3 host, one broadband centered at about 420 nm resulting from trapscan be observed. In the case of other earth ions such as Pr3+, Sm3+, Eu3+, Tb3+ and Dy3+, their characteristic line emitting as well as the ~420 nm broadband luminescence can beobtained. The mixture of their characteristic line emitting with the ~420 nm broadband luminescence results in various afterglow color.
A series of rare earth ions doped CdSiO3: RE3 + (RE = Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu) are prepared by the conventional high-temperature solid-state method. The results of XRDmeasurement indicate that the products fired at 1050 ° C for 3 h have a good crystallization without any detectableamount of impurity phase. Rare earth ions doped CdSiO3phosphors possess excellent luminescence properties. When rare earth ions such as Y3 +, La3 +, Gd3 +, Lu3 +, Ce3 +, Nd3 +, Ho3 + Er3 +, Tm3 + and Yb3 + are introduced into the CdSiO3 host, one broadband centered at about 420 nm resulting from trapscan be observed. In the case of other earth Their characteristic line emitting as well as the ~ 420 nm broadband luminescence can beobtained. The mixture of their characteristic line emitting with the ~ 420 nm broadband luminescence results in various afterglow color.