ZnO薄膜柱状织构取向及c轴取向度

• 作 者: 黄毓虹 罗维根
• 机 构: 中国科学院上海硅酸盐研究所,中国科学院上海硅酸盐研究所
• 出 处: 无机材料学报
• 发表日期: 1990年04期
• 关键词: 取向度 c轴取向 ZnO 薄膜结构 倾斜放置 入射粒子 溅射系统 陶瓷薄膜 修正公式 薄膜制备

采用直流平面磁控反应高速率溅射的方法制备 ZnO 薄膜。讨论了衬底倾斜放置时,改变衬底偏压对柱状织构倾斜度及比取向度,f_((002)(101))的影响。提出了溅射系统中,衬底偏压对柱状织构倾角的修正公式。实验结果表明,ZnO 薄膜的 c 轴取向度不能和它的柱状织构倾角混为一谈。两者有联系,但不等价。柱状织构的斜率 tgβ正比于有效入射粒子流斜率 tgα′。

ZnO films were prepared by DC plane magnetron reaction at high rate. The effect of substrate bias on the skewness and specific orientation of columnar texture, f _ ((002) (101)), is discussed when the substrate is tilted. In the sputtering system, the bias of the substrate to the columnar texture inclination correction formula. The experimental results show that the c-axis orientation of ZnO thin film can not be confused with its columnar texture dip angle. The two are linked, but not equal. The slope tgβ of the columnar texture is proportional to the slope of the effective incident particle flow tgα ’.