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HEMT器件利用2DEG高迁移率的特点,在高速电路研制中具有很大潜力。尤其是采用E/D HEMT的DCFL逻辑电路,元件数少,工艺简单,可集中体现其高速、低功耗的特点。 进行了HEMT门特性的理论分析与计算机模拟,建立了使用E/DHEMT的DCFL门电路分析模型,并获得了与实验数据一致的分析结果。其直流传输特性曲线如图1所示。同时,开展了HEMT E/D倒相器、或非门(使用单栅HEMT)、与非门(使用双栅HEMT)及环形振荡器(包括9级、17级与19级)的实验研制,均取得较好结果。
HEMT devices take advantage of 2DEG high mobility characteristics, high-speed circuit development has great potential. Especially, the DCFL logic circuit using E / D HEMT has a few components and a simple process, which can fully reflect the characteristics of high speed and low power consumption. The theoretical analysis and computer simulation of HEMT gate characteristics were carried out. The DC / DC gate model was built using E / DHEMT, and the analytical results consistent with the experimental data were obtained. The DC transmission characteristics shown in Figure 1. At the same time, carried out the HEMT E / D inverter, NOR gate (using single-gate HEMT), NAND gate (using dual-gate HEMT) and ring oscillator (including 9, 17 and 19) experimental development, Have achieved better results.