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论述了S波段GaAs功率FET的设计、制造和性能。38.4mm栅宽的器件,在3～3.5GHz范围内,已产生出高达20W的脉冲功率,增益8dB。
The design, manufacture and performance of S-band GaAs power FET are discussed. 38.4mm gate-width devices, in the 3 ~ 3.5GHz range, have produced up to 20W pulse power, gain 8dB.