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With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimen- sions,high-dielectric constant (high-k) gate materials,as alternatives to SiO_2,have been extensively investi- gated.Hf (Zr)-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance.This paper reviews the recent progress on Hf (Zr)-based high- k gate dielectrics based on PVD (physical vapor deposition) process.This article begins with a survey of various methods developed for generating Hf (Zr)-based high-k gate dielectrics,and then mainly focuses on microstructure,synthesis,characterization,formation mechanisms of interracial layer,and optical properties of Hf (Zr)-based high-k gate dielectrics.Finally,this review concludes with personal perspectives towards future research on Hf (Zr)-based high-k gate dielectrics.
With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor structures, high-dielectric constant (high-k) gate materials, as alternatives to SiO 2, have been extensively investigated. Hf (Zr) -based high- k gate dielectric thin films have been as as most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf (Zr) -based high - k gate dielectrics based on PVD (physical vapor deposition) process. This article begins with a survey of various methods developed for generating Hf (Zr) -based high-k gate dielectrics, and then mainly focusing on microstructure, synthesis, characterization, formation mechanisms of interracial layer, and optical properties of Hf (Zr) -based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf (Zr) -based high- k gate dielectrics.