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采用射频磁控溅射法在不同衬底温度和不同氮气分压下在石英玻璃衬底上制备氮化锌薄膜.利用XRD和喇曼散射仪分析了样品的晶体结构和组成.结果表明当氮气分压为1/2时可以生成多晶单一相的氮化锌薄膜.利用霍尔效应和光学透过谱测量了样品的电学和光学性质.结果表明衬底温度对样品的电学和光学性质有很大的影响.衬底温度从100℃上升到300℃时,样品的电阻率从0.49降低到0.023Ω.cm.电子浓度从2.7×1016升高到8.2×1019cm-3.在衬底温度为200℃,氮气分压为1/2时,样品的光学带隙为1.23eV.
The films of zinc nitride were prepared on a quartz glass substrate by RF magnetron sputtering at different substrate temperatures and nitrogen partial pressure.The crystal structure and composition of the samples were analyzed by XRD and Raman scattering.The results showed that when nitrogen The partial pressure of 1/2 can produce polycrystalline single-phase zinc nitride film.The electrical and optical properties of the samples were measured by Hall effect and optical transmission spectra.The results show that the substrate temperature of the sample electrical and optical properties The resistivity of the sample decreased from 0.49 to 0.023 Ω · cm and the electron concentration increased from 2.7 × 10 16 to 8.2 × 10 19 cm -3 when the substrate temperature increased from 100 ℃ to 300 ℃. The optical band gap of the sample was 1.23 eV at 200 ° C with a nitrogen partial pressure of 1/2.