【摘 要】
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Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layer on the band structure, gain and differential gai
【机 构】
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State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of
论文部分内容阅读
Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layer on the band structure, gain and differential gain of GaInNAs/GaAs quantum well lasers have been investigated.The results show that the GaNAs barrier has a disadvantage in increasing the density of states in the conduction band. Meanwhile, the multilayer quantum wells need higher transparency carrier density than the GaInNAs/GaAs single quantum well with the same wavelength. However, they help to suppress the degradation of the differential gain. The calculation also shows that from the viewpoint of band structure, the strain-compensated structure and the strain-mediated structure have similar features.
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