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通过实验研究表明:不同预处理方法对KOH腐蚀后硅片表面粗糙度的影响不同,分别用35℃的BOE(7:1氟化铵腐蚀液)、常温BOE、10:1HF、50:1HF含HF成分的腐蚀液对硅片进行预处理,再和未做预处理的硅片在同等条件下进行KOH腐蚀,实验结果发现预处理后硅片表面粗糙度比未做处理的硅片表面粗糙度增加约1nm左右,即经过含HF成分的腐蚀液预处理后的硅片再进行KOH腐蚀,其表面粗糙度将变差。
The experimental results show that the influence of different pretreatment methods on the surface roughness of the silicon wafer after KOH etching is different. The effects of BOE (7: 1 ammonium fluoride solution), BOE, 10: 1HF, 50: 1HF HF component of the etching solution of silicon pretreatment, and then without pretreatment of silicon wafers under the same conditions for KOH corrosion, the experimental results show that pretreatment wafer surface roughness than untreated silicon surface roughness An increase of about 1nm, that is, after HF-containing etching solution pretreatment of silicon wafers and then KOH corrosion, the surface roughness will be worsened.