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一九七二年美国麻省理工学院(MIT)发表了X线曝光技术的研究成果。从此,作为以超大规模集成电路等为对象的超精密加工技术的一环引起了人们的注目,其原理已在美国专利№3.734及842的“软X线复印装置及方法”(1972年1月申请)中确立了。除美国发表上述三项专利外,日本、法国及西德也获有专利权。其作用原理是采用比原来复印用的紫外线波长短的幅射线,大约为原来的1/500。由于采用紫外线曝光时的掩模板存在衍射现象,所以用紫外线只能复印线宽2μ以上的图形。而用
In 1972, Massachusetts Institute of Technology (MIT) published the research results of X-ray exposure technology. Since then, attention has been drawn as a part of the ultra-precision machining technology for ultra-large-scale integrated circuits and the like, and the principle thereof has been disclosed in U.S. Patent Nos. 3.734 and 842, “Soft X-ray Photocopying Apparatus and Method”, January 1972 Application) established. In addition to the United States published the above three patents, Japan, France and West Germany also have a patent. The principle of its use is shorter than the original UV radiation used for copying radiation, about the original 1/500. Due to the diffraction phenomenon of the mask plate when exposed to ultraviolet rays, only the pattern of line width 2μ or more can be copied with ultraviolet rays. And use