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玻璃掺杂半导体量子点材料表现出明显的量子限域作用和三阶非线性光学效应,它在制造全光学集成元件的应用前景越来越受到人们的重视。在这类材料的研究中一个很重要的问题就是:材料在具有大的非线性效应的同时还应具有合适的线性和非线性吸收。因为材料的非线性优值不但与非线性系数(χ~(3)或n_2)成正比,而且与吸收系数成反比。但目前非线性系数比较大的一类直接能隙半导体具有确定的吸收边,例如CdS和ZnS的吸收边分别为2.42和3.8 eV,这就决定了它们的吸收特性的可调性很小。尽管可以通过量子尺寸效应改变其吸收边,但这种改变也是很有限的。从应用的角度来看,希望材料的吸收边能够根据需要而调整。
Glass-doped semiconductor quantum dot material exhibits obvious quantum confinement effect and third-order nonlinear optical effect, and it has drawn more and more attention in the application prospect of manufacturing all-optical integrated components. A very important issue in the study of such materials is that materials should have suitable linear and non-linear absorptions with large non-linear effects. Because the material’s nonlinear merit is not only proportional to the nonlinear coefficient (χ ~ (3) or n_2), but also inversely proportional to the absorption coefficient. However, a class of direct gap semiconductors with relatively large non-linear coefficients have definite absorption edges. For example, the absorption edges of CdS and ZnS are 2.42 and 3.8 eV, respectively, which determine the small tunability of their absorption characteristics. Although the absorption edge can be changed by the quantum size effect, the change is limited. From an application point of view, it is desirable that the absorbing edge of the material be tailored to the needs.