Insulated gate bipolar transistor with trench gate structure of accumulation channel

• 作 者: 钱梦亮 李泽宏 张波 李肇基
• 机 构: State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienc
• 出 处: 半导体学报
• 发表日期: 2010年03期
• 关键词: trench bipolar transistor emitter insulated collector boron leakage breakdown bl

An accumulation channel trench gate insulated gate bipolar transistor(ACT-IGBT) is proposed.The simulation results show that for a blocking capability of 1200 V,the on-state voltage drops of ACT-IGBT are 1.5 and 2 V at a temperature of 300 and 400 K,respectively,at a collector current density of 100 A/cm~2.In contrast,the on-state voltage drops of a conventional trench gate IGBT(CT-IGBT) are 1.7 and 2.4 V at a temperature of 300 and 400 K, respectively.Compared to the CT-IGBT,the ACT-IGBT has a lower on-state voltage drop and a larger forward bias safe operating area.Meanwhile,the forward blocking characteristics and turn-off performance of the ACT-IGBT are also analyzed.

The simulation results show that for a blocking capability 1200 V, the on-state voltage drops of ACT-IGBTs are 1.5 and 2 V at a temperature of 300 and 400 K, respectively, at a collector current density of 100 A / cm~2. In contrast, the on-state voltage drops of a conventional trench gate IGBT (CT-IGBT) are 1.7 and 2.4 V at a temperature of 300 and 400 K, respectively. Compared to CT-IGBT, the ACT-IGBT has a lower on-state voltage drop and a larger forward bias safe operating area. Meanwhile, the forward blocking characteristics and turn-off performance of the ACT-IGBT are also analyzed.