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p-n 结二极管的电荷存聍(因而也卸恢复时间)问题曾经是结式二极管在开关线路中应用的一个最麻烦的现象。如果一遇辑门中的许多二极管同时从通导开关到截止,那么将产生大量的存聍电荷,它趋向于去翻转同一线路中未开关的二极管状态。因此,可能引起一个虚假的罗辑响应。由于现有的一些二极管模型不适于分析这样的暂态问题,因此本文介绍一种新的二极管模型。根据对结式二极管中物理过程的研究,在二极管端点的电性能和它的基区材料中的电荷存聍之间,可以建立一个极好的关系式。这个关系式可以表为一个简单的流线图,根据这个流线图,提出了 p-n 结二极管的集中电荷模型。利用这个模型,可以简单而又极好地解决二极管开关线路中遇到的暂态问题,而为了求数值解仅仅需要两个参数——饱和电流 I_s 和二极管时间常数 T_d。
The problem of p-n junction diode charge dumping (and hence dump recovery time) has been one of the most troublesome applications of junction diodes in switching circuits. If many of the diodes in a gate simultaneously pass from on-to-off, a large amount of charge will be generated, which tends to flip the undamped diode in the same line. Therefore, it may cause a false Luo response. Since some of the existing diode models are not suitable for analyzing such transient problems, this article presents a new diode model. Based on the physical study of the junction diode, an excellent relationship can be established between the electrical properties of the diode terminal and the charge in its base material. The relationship can be summarized as a simple streamline diagram from which a concentrated charge model of a p-n junction diode is proposed. Using this model, the transient problems encountered in diode switching circuits can be easily and simply solved, and only two parameters, the saturation current I_s and the diode time constant T_d, are required for solving the numerical solution.