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本文根据0.4μm栅长MESFET的实验情况,参照考虑非稳定电子动力学和边缘效应后的Carnez结果,对Fukui的公式进行修正。据此计算g_m,C_(gs)的结果与实验结果、Carnez结果很一致。用修正后的F_0公式计算所得器件最小噪声系数和实验结果也符合。
Based on the experimental results of a 0.4μm gate-length MESFET, the Fukui’s formula is modified with reference to the Carnez results after considering the unsteady electron dynamics and edge effects. According to this calculation, the results of g_m and C_ (gs) are in good agreement with the experimental results and Carnez results. The calculated minimum noise figure of the device with the modified F_0 formula and the experimental results also meet.