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用热蒸发CVD法制备了β-Ga2O3纳米材料,并用光致发光(PL)方法研究了其发光特性.X射线衍射分析显示,产物为单斜结构的β-Ga2O3.扫描电子显微镜测试表明:在较小氧流量条件下制备的产物为β-Ga2O3纳米带,宽度小于100 nm,长度有几微米;较大氧流量时制备出β-Ga2O3纳米晶粒结构,晶粒尺度在80—150 nm.PL的测试表明:β-Ga2O3纳米结构在波长516 nm处有很强的绿色发光带,且随着氧流量的逐渐增加发光强度逐渐减弱.在氧气氛中900℃退火2 h处理后,发光强度减弱,进一步证实氧空位缺陷是β-Ga2O3纳米材料发光的主要因素.
Β-Ga2O3 nanomaterials were prepared by thermal evaporation CVD method and their luminescent properties were studied by photoluminescence (PL) method.X-ray diffraction analysis showed that the product was monoclinic β-Ga2O3.The results of scanning electron microscopy Β-Ga2O3 nanoribbons with a width of less than 100 nm and a few micrometers in length were prepared with a smaller oxygen flow rate. The β-Ga2O3 nanocrystalline structure was prepared at a large oxygen flow rate with a grain size of 80-150 nm. The results of PL show that the β-Ga2O3 nanostructures have a strong green luminescence band at a wavelength of 516 nm, and the luminescence intensity gradually decreases with the increase of the oxygen flux.After annealed at 900 ℃ for 2 h in oxygen atmosphere, the luminescence intensity Weakened. It is further confirmed that the oxygen vacancy defect is the main factor for the luminescence of β-Ga2O3 nanomaterials.