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By using spectroscopic photoconductance, transmittance and luminescence methods,the optical characterization of GaN grown by plasma source MBE have been evaluated. The imperfection of the epitaxial layer deduced from the measured results have been discussed. The transient responses of the photoconductive detectors have been measured. Two time constants of 0.17 ms and 6.85 ms at room temperature are deduced from the measured results. The origins have also been discussed.
The use of spectroscopic photoconductance, transmittance and luminescence methods, the optical characterization of GaN grown by plasma source MBE have been evaluated. The imperfection of the epitaxial layer deduced from the measured results have been discussed. Two time constants of 0.17 ms and 6.85 ms at room temperature are deduced from the measured results. The origins have also been discussed.