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研究了对MOS结构的γ射线总剂量辐射效应进行Sentaurus TCAD仿真所需模型的有效性。仿真结果表明,Sentaurus TCAD提供的Radiation模型和Traps模型在氧化物中并不能被激活,而利用激活氧化物体区和Si/SiO2界面的Insulator Fixed Charges模型可以分别对γ总剂量辐射造成的氧化层固定电荷和Si/SiO2界面陷阱电荷进行有效的模拟仿真。
The effectiveness of the model for the Sentaurus TCAD simulation of the total dose-effect gamma radiation of MOS structures was investigated. The simulation results show that the Radiation model and the Traps model provided by Sentaurus TCAD can not be activated in the oxide. However, the Insulator Fixed Charges model which activates the oxide body region and the Si / SiO2 interface can respectively fix the oxide layer caused by the γ dose radiation Charge and Si / SiO2 interface trap charge for effective simulation.