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提出了一种新结构单片集成增强/耗尽型(E/D)InGaP/AlGaAs/InGaAs赝配高电子迁移率晶体管(PHEMTs).外延层材料通过分子束外延技术生长,在室温下,其电子迁移率和二维电子气浓度分别为5410cm2/(V·s)和1.34×1012cm-2.首次提出了普通光学接触曝光分步制作增强与耗尽型的栅技术方法.研制出了单片集成E/D型PHEMTs,获得良好的直流和交流特性,最大饱和漏电流密度分别为300和340mA/mm,跨导为350和300mS/mm,阈值电压为0.2和-0.4V,增强型的fT和fmax为10.3和12.4GHz,耗尽型的fT和fmax为12.8和14.7GHz.增强/耗尽型PHEMTs的栅漏反向击穿电压都为-14V.
A novel monolithically integrated enhancement / depletion type (E / D) InGaP / AlGaAs / InGaAs pseudomorphic high electron mobility transistor (PHEMTs) is proposed.The epitaxial layer material is grown by molecular beam epitaxy Electron mobility and two-dimensional electron gas concentration of 5410cm2 / (V · s) and 1.34 × 1012cm-2 respectively.The method of step-by-step fabrication of enhancement and depletion gate was proposed for the first time by using ordinary optical contact exposure.The monolithic The integrated E / D PHEMTs achieve good DC and AC characteristics with maximum saturation leakage current of 300 and 340 mA / mm respectively, transconductance of 350 and 300 mS / mm, threshold voltages of 0.2 and -0.4 V, enhanced fT And fmax of 10.3 and 12.4 GHz, and depletion mode fT and fmax of 12.8 and 14.7 GHz respectively.The gate-to-drain reverse breakdown voltage of both enhancement / depletion PHEMTs is -14V.