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半导体器件及集成电路的可靠性,很大程度地依赖于半导体表面的纯化技术。因此,自晶体管发明以来,在半导体器件制造领域,为达到器件表面纯化和稳定的目的,在探索和研究纯化技术上付出了很大的努力,硅器件由于平面技术的出现,与以前的台式结构相比有了显著的进步。在平面技术中,保护器件表面是通过硅表面热氧化,生成氧化硅层来实现的。由于热氧化层有绝缘性能好、与硅表面之间通常不形成表面能级、而且稳定、结构致密又有一定机械强度等长处,故具有保护硅器件表面的优良特性。至于热氧化层中钠离子等引起的不稳定性只要在清洁环境下进行器件的制造即可得以改进。倘若在热氧化层上再复盖一层磷硅玻璃(PSG),氮化硅(Si_3N_4),三氧化二铝,则能进一步解决由钠离子等引起的不稳定性。因而,到目前为止平面工艺仍然是制造硅器
The reliability of semiconductor devices and integrated circuits relies heavily on the purification of semiconductor surfaces. Therefore, since the invention of the transistor, in the field of semiconductor device manufacturing, in order to achieve the purpose of device surface purification and stabilization, great efforts have been made in exploring and studying the purification technology. Because of the planar technology, Compared with the significant progress. In planar technology, protecting the device surface is accomplished by thermal oxidation of the silicon surface to create a silicon oxide layer. Since the thermal oxide layer has good insulation properties, and does not usually form a surface energy level with the silicon surface, and stable, compact structure and a certain mechanical strength and other advantages, it has the excellent characteristics of silicon device surface protection. As for the instability caused by sodium ions and the like in the thermal oxide layer, it is only possible to improve the device manufacturing in a clean environment. If the thermal oxide layer covered with a layer of phosphosilicate glass (PSG), silicon nitride (Si_3N_4), aluminum oxide, you can further solve the instability caused by sodium ions. Thus, the planar process so far has been the manufacture of silicon