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砷化镓场效应晶体管作为超高频领域的放大器件占有极其重要的地位,这一点本文不再赘述。由于该器件的栅下电子流是由栅势垒的耗尽层的变化来控制的,所以,为适应高频应用,电子流的渡越距离即栅长应极力缩短;此外,为降低串联电阻,也需要缩短栅-源间的距离。目前,已有过栅长能缩短到1微米或更小,即栅长1微米时,f_(max)=40～50千兆赫,栅长达亚微米时,f_(max)≈80千兆赫的报告。这种器件结构通常是通过反复的高精度光刻技术来完成的,另一方面,为尽量减少光刻技术的麻烦,提出了许多自调整
Gallium arsenide field-effect transistor as the field of ultra-high frequency amplifier occupies a very important position, this article will not repeat them. Since the under-gate current flow of the device is controlled by the depletion layer of the gate barrier, the transition distance of the electron flow, ie, the gate length, should be shortened to accommodate high-frequency applications. In addition, to reduce the series resistance , You also need to shorten the distance between the gate and the source. At present, the gate length has been reduced to 1 micron or less, that is, f_ (max) = 40 to 50 GHz when the gate length is 1 μm and f_ (max) ≈ 80 GHz report. This device structure is usually done by repeated high-precision lithography, on the other hand, to minimize the hassle of lithography, many self-tuning