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美帝费尔查尔德公司所报导的“隔离平面工艺”——Isoplanar technique(又称“等平面工艺”)实际上是用平面氧化法代替常规的扩散法来达到隔离集成电路元件之目的。据称,其双极型电路的封装密度已达到用新的平面技术所制成的 MOS 电路密度之水平。
The “Isolation Planar Process” reported by the US-based Fairchild Company - the Isoplanar technique - actually uses planar oxidation instead of conventional diffusion to achieve the purpose of isolating integrated circuit components. The packaging density of its bipolar circuits is said to have reached the level of MOS circuit density made with the new planar technology.