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利用射频氮等离子辅助分子束外延(RF-MBE)技术在GaAs(001)衬底上生长稀氮InNSb半导体薄膜,并通过原子力显微镜(AFM)、扫描电子显微镜(SEM)、X射线衍射仪(XRD)和拉曼散射光谱等测量手段对样品的微结构和N组分等进行了表征.结果显示样品有较好的晶体质量,N组分可高达0.84%(XRD的结果).本文还对样品的输运性质进行了表征,结果显示样品在室温下具有较低的载流子浓度和较高的迁移率.另外,初步研究表明在InSb中掺入N可导致其室温磁阻明显下降.
The thin films of InNSb thin films were grown on a GaAs (001) substrate by radio frequency nitrogen plasma assisted molecular beam epitaxy (RF-MBE) and characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction ) And Raman scattering spectroscopy were used to characterize the microstructure and N-component of the sample.The results show that the sample has a good crystal quality and the N content can reach as high as 0.84% (XRD result) The results show that the sample has lower carrier concentration and higher mobility at room temperature.In addition, preliminary studies show that the incorporation of N in InSb can lead to a significant decrease of its magnetoresistance at room temperature.