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间接带隙Ｓｉ１ － ｘＧｅｘ 合金材料由于合金无序涨落而产生了无需声子参与的发光峰。自由激子局域化程度增加有利于无声子参与的带间复合发射，文章从能带工程角度出发，探索Ｓｉ１ － ｘＧｅｘ 合金低维应变材料发光的机理。提出利用应力生长Ｓｉ１ － ｘ Ｇｅｘ 量子点及其阵列是实现Ｓｉ１ － ｘＧｅｘ 低维材料室温发光的发展方向。
Indirect Bandgap Si1 - xGex Alloys Do not Need Phonon Involvement of Luminescence Peaks Due to Unordered Fluctuations. The increase of localization of free excitons is beneficial to the composite emission with no phonon participation. The article explores the mechanism of the luminescence of Si1 - xGex low dimensional strain materials from the perspective of energy band engineering. It is proposed that the growth of Si1 - xGex quantum dots and its array by using stress is the development direction of Si1 - xGex low dimensional materials at room temperature.