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基于JBS整流二极管理论,详细介绍了一种Si基JBS整流二极管设计方法、制备工艺及测试结果。在传统肖特基二极管(SBD)有源区,利用光刻和固态源扩散工艺形成掺硼的蜂窝状结构,与n型衬底形成pn结,反向偏置时抑制了因电压增加引起的金属-半导体势垒高度降低,减小了漏电流;采用离子注入形成两道场限环的终端结构,有效防止了边缘击穿,提高了反向击穿电压。对制备的器件使用Tektronix 370B可编程特性曲线图示仪进行了I-V特性测试,结果表明本文设计的Si基JBS整流二极管正向压降VF=0.78 V(正向电流IF=5 A时),反向击穿电压可达340 V。
Based on the JBS rectifier diode theory, a design method, manufacturing process and test results of a Si-based JBS rectifier diode are introduced in detail. In a conventional Schottky diode (SBD) active region, a boron-doped honeycomb structure is formed by photolithography and a solid-state source diffusion process to form a pn-junction with an n-type substrate, which suppresses the voltage increase caused by reverse bias The height of the metal-semiconductor barrier is reduced, and the leakage current is reduced. The terminal structure of two field limiting rings is formed by ion implantation, which effectively prevents the edge breakdown and improves the reverse breakdown voltage. The IV characteristics of the prepared devices were tested using Tektronix 370B Programmable Characteristic Graph. The results show that the forward voltage drop of Si-based JBS rectifier diode is 0.78 V (IF = 5 A) Breakdown voltage up to 340 V.