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利用真空蒸发法在石英玻璃衬底上制备了ZnS薄膜,将能量80keV,剂量1×1017cm-2的Ti离子注入到薄膜中,并将注入后的ZnS薄膜进行退火处理,退火温度500—700℃.利用X射线衍射(XRD)研究了薄膜结构的变化,利用光致发光(PL)和光吸收研究了薄膜光学性质的变化.XRD结果显示,衍射峰在500℃退火1h后有一定程度的恢复;光吸收结果显示,离子注入后光吸收增强,随着退火温度的上升,光吸收逐渐降低,吸收边随着退火温度的提高发生蓝移;PL显示,薄膜发光强度随退火温度的上升而增强.
The ZnS thin film was prepared on a quartz glass substrate by a vacuum evaporation method, Ti ions with an energy of 80 keV and a dose of 1 × 10 17 cm -2 were implanted into the thin film, and the annealed ZnS thin film was annealed at an annealing temperature of 500-700 ° C. The change of film structure was investigated by X-ray diffraction (XRD), and the optical properties of the films were studied by photoluminescence (PL) and optical absorption.The XRD results showed that the diffraction peaks were restored after annealed at 500 ℃ for 1h, The results of light absorption showed that the light absorption increased after ion implantation. With the increase of annealing temperature, the light absorption gradually decreased and the absorption edge shifted blue with the increase of annealing temperature. PL showed that the luminescence intensity of the film increased with the increase of annealing temperature.