Effects of Strains on Thermal Conductivity of Si/Ge Superlattices

• 作 者: ZHANG Xingli GONG Cuizhi WU Guoqiang
• 机 构: College of Mechanical and Electrical Engineering,Northeast Forestry University,Harbin 150040,China;T
• 出 处: 武汉理工大学学报（材料科学版）（英文版）
• 发表日期: 2018年5期
• 关键词: thermal conductivity strains nonequilibrium molecular dynamics Si/Ge superlattic

The effect of strains on the thermal conductivity of Si/Ge superlattices was investigated by nonequilibrium molecular dynamics(NEMD)simulation.The thermal conductivities experienced a near linear drop with increasing tensile and compressive strains.It was explained by the fact that the decrease of the phonons velocities and a mass of structural defects generated under strains.Meanwhile,a theoretical calculation based on Modified-Callaway model was performed,and it was found that the theoretical results were in good agreement with the molecular dynamics results.