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P-type double barrier resonant tunneling diodes (RTD) with the single Si0.6Ge0.4 quantum well and double Si0.6 Ge0.4 spacer have been realized by using an ultra clean low-pressure chemical vapor deposition system. The effect of Si1-yCy layer on the characteristics of the devices was shown by comparing the current-voltage (Ⅰ-Ⅴ) characteristics of RTDs of the barriers of Si layers with that of Si/Si1-yCy/Si structures. The peak voltage was gradually increased and the resonant current decreased obviously with increasing C content in the Si/Si1-yCy/Si barriers. The origin of the phenomena above can be attributed to the C related deep acceptor levels in the Si/Si1-yCy/Si barriers. The possible mechanism for the observed Ⅰ-Ⅴcharacteristics was shown more clearly by increasing C content to 3% and changing the thicknesses of Si and Si1-yCy layers in the Si/Si1-yCy/Si barriers.