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采用ＴＥＭ、ＸｒａｙＲｏｃｋｉｎｇＣｕｒｖｅ等测试的方法，对ＧａＡｓ晶片化学机械抛光后亚表面损伤层引入的深度进行了分析，探讨了碱性ＳｉＯ２胶体水溶液加入不同浓度的电解质（ＮａＯＣｌ）后所发生胶粒带电程度的变化，从胶体理论的角度解释了ＳｉＯ２胶体溶液不稳定对ＧａＡｓ抛光晶片亚表面损伤层的影响。
The depth of the sub-surface damage layer after chemical mechanical polishing of GaAs wafers was analyzed by TEM and X-ray Rocking Curves. The effects of the colloidal charged on the Na 2 SiO 4 aqueous solution with different concentration of electrolytes (NaOCl) Degree of change, from the colloidal theory point of view of the instability of SiO2 colloidal solution on the GaAs wafer sub-surface damage layer damage.