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在单晶硅片基底上采用反应磁控溅射技术交替溅射AlCrTiZrNb靶与Al_(2)O_(3)靶,制备了不同厚度Al_(2)O_(3)层的(AlCrTiZrNb)N/Al_(2)O_(3)纳米多层膜。采用X射线衍射仪(X-ray diffraction,XRD),高分辨率透射电子显微镜(high resolution transmission electron microscopes,HRTEM),扫描电子显微镜(scanning electron microscope,SEM)以及纳米压痕测试仪对(AlCr