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报道了采用I线步进光刻实现的76.2 mm SiC衬底0.5μm GaN HEMT。器件正面工艺光刻均采用了I线步进光刻来实现,背面用通孔接地。栅脚介质刻蚀采用一种优化的低损伤RIE刻蚀方法实现了60°左右的侧壁倾斜角,降低了栅脚附近峰值电场强度,提高器件性能和可靠性。研制的GaN HEMT器件fT为15 GHz,fmax为24 GHz,6 GHz下的MSG为17 dB,满足C波段及以下频段应用要求。对1.25 mm栅宽GaN HEMT在2 GHz、28 V工作电压下的负载牵引,最佳功率匹配的功率附加效率66%,对应输出功率以及功率增益分别为38.0 dBm和17.3 dB。对大栅宽GaN HEMT器件的版图进行了优化以利于散热,并将其应用于输出功率60 W的L波段功率模块末级开发。
A 76.2 mm SiC substrate 0.5 μm GaN HEMT using I-line step lithography was reported. The front of the device lithography process are used I-line lithography step to achieve the back of the through-hole grounding. Gate Dielectric Etch A side-wall tilt angle of about 60 ° is achieved with an optimized low-damage RIE etch, reducing the peak electric field near the gate pin and improving device performance and reliability. The developed GaN HEMT device has a fT of 15 GHz, a fmax of 24 GHz and a MSG of 17 dB at 6 GHz, meeting the application requirements of the C band and the following bands. For 1.25 kW gate-width GaN HEMTs with 2-GHz, 28-V operation, the power-added efficiency for optimal power matching is 66%, corresponding to output power and power gain of 38.0 dBm and 17.3 dB, respectively. The layout of the GaN-wide GaN HEMT device has been optimized to dissipate heat and applied to the last stage of the L-band power module with 60 W output power.