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一 引言 互补全属一氧化物——半导体集成电路(以下简称CMOS±C)以其固有的独特优点而日益显示其强有力的生命力。这主要是:极低的静态功耗;较高的工作速度;对电源的波动要求不高;能在较宽温度范围及3V～15V范围内用单一电源正常工作;高的抗干涉能力。这些特点在大规模、超大规模集成电路(LSI及VLSI)中有特别重要意义,因为(1)在这里发热散热或
I. INTRODUCTION Complementary all-metal-oxide semiconductor integrated circuits (hereinafter referred to as CMOS ± C) are increasingly showing their strong vitality with their inherent unique advantages. This is mainly: a very low static power consumption; high working speed; less demanding on the power fluctuations; in a wide temperature range and 3V ~ 15V range with a single power supply to work properly; high anti-interference ability. These features are of particular importance in large-scale, very large scale integrated circuits (LSIs and VLSIs) because (1) heat is dissipated here or