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通过制备面向MEMS红外光源的高辐射率多晶硅纳米柱状结构和单晶硅纳米孔结构,以提升红外源表面辐射率,降低器件功耗。制备方法分别为反应离子刻蚀(reactive-ion-etching,RIE)及等离子浸没离子注入(plasma immerse ion implantation,PIII)工艺对单晶硅以及铝电极掩膜的多晶硅表面调控修饰制备。并对2种纳米硅结构进行了吸收率测试,对铝电极掩膜进行了引线键合破坏拉力测试。测试表明,纳米硅结构在3~5μm波段的辐射率可以达到85%以上,暴露在刻蚀气氛后的铝电极掩膜引线键合强度可以达到器件工艺要求。
By preparing a high emissivity polycrystalline silicon nano columnar structure and a monocrystalline silicon nanohole structure for a MEMS infrared light source, the surface emissivity of the infrared source is increased and the power consumption of the device is reduced. The preparation method comprises the following steps of: preparing polycrystalline silicon surface modification of monocrystalline silicon and aluminum electrode mask by reactive ion etching (RIE) and plasma immersion ion implantation (PIII) respectively. The absorptivity of the two kinds of nanostructures was tested, and the lead bonding failure of the aluminum electrode mask was tested. The results show that the emissivity of the nanosilica structure can reach more than 85% in the wavelength band of 3 ~ 5μm. The bonding strength of the aluminum electrode mask after exposed to the etching atmosphere can meet the requirements of the device technology.