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用射频磁控反应溅射法在ZnS衬底上制备了GeC薄膜,研究了工艺参数对Ge靶溅射及GeC薄膜红外透射性能的影响.衬底温度较低时GeC薄膜中含有H,形成了CH2,CH3,Ge-CH3等,使薄膜产生红外吸收;随衬底温度升高,薄膜红外吸收明显减小.靶基距、射频功率、Ar:CH4气体流量比、总气压对靶面中毒及溅射影响较大,但对GeC薄膜红外吸收影响较小.靶面中毒严重时,所制备无氢GeC薄膜附着性能差,随靶中毒减弱薄膜附着性能变好.优化工艺后,在ZnS衬底上制备了附着性能良好的无氢GeC薄膜,其折射率约为1.78,薄膜中C的含量比Ge的大,二者主要形成了C—Ge键.所制备的GeC/GaP红外增透保护膜系对ZnS衬底有良好的增透效果.
GeC thin films were prepared on ZnS substrate by RF magnetron reactive sputtering method and the influence of process parameters on Ge target sputtering and GeC film infrared transmission properties was studied.The GeC films contain H at low substrate temperature CH2, CH3, Ge-CH3 and so on, the infrared absorption of the film was produced.With the increase of the substrate temperature, the infrared absorption of the film was obviously decreased.The target base distance, radio frequency power, Ar: CH4 gas flow ratio, The influence of sputtering on the infrared absorption of GeC thin film is less than that of GeC thin film.In the case of severe target poisoning, the prepared hydrogen-free GeC thin film has poor adhesion performance and weakens the adhesion property of the film with the target poisoning.After the optimization process, GeC / GaP infrared-enhanced protective film was prepared on a Ge-free hydrogen-free GeC film with a refractive index of about 1.78 and a high content of C in the film as compared with Ge, both of which formed C-Ge bonds Department of ZnS substrate has a good anti-proliferation effect.