【摘 要】
：
Specimens were implanted with 5.0MeV84 Kr19+ions,to successively increase fluences of 5×1013,2×1014,1×1015ions/cm2 at room temperature in the 320keV High-vol
【机 构】
：
General Research Institute for Nonferrous Metals,
【出 处】
：
IMP & HIRFL Annual Report
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Specimens were implanted with 5.0MeV84 Kr19+ions,to successively increase fluences of 5×1013,2×1014,1×1015ions/cm2 at room temperature in the 320keV High-voltage Platform.The implanted specimens were subsequently thermally annealed in a vacuum around 2×10-4 Pa at 500,700and 1000℃,respectively.Cross-sectional specimens for TEM observation were prepared by using a small angle cleavage technique[1],and were investigated in a transmission electron microscope of a JEOL 2010.
Specimens were implanted with 5.0 MeV84 Kr19 + ions, to sequentially increase fluences of 5 × 1013, 2 × 1014, 1 × 1015ions / cm2 at room temperature in the 320 keV High-voltage Platform. The implanted specimens were subsequently thermally annealed in a vacuum around 2 × 10 -4 Pa at 500, 700 and 1000 ° C., respectively. Cross-sectional specimens for TEM observation were prepared by using a small angle cleavage technique [1], and were investigated in a transmission electron microscope of a JEOL 2010.
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