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Amorphous silicon (a-Si) films, of 400 nm thick, are deposited on single-side polished (100) crystalline silicon (c-Si) substrates by using radio-frequency (RF) magnetron sputtering. Half of a-Si samples are annealed at 1000 ℃ for 20 h under the vacuum condition to obtain the nano-crystalline silicon (nc-Si) film. And then the a-Si, nc-Si films and crystalline silicon (c-Si) are irradiated at room temperature with 6 MeV Bi-ions.
Half of a-Si samples are deposited on single-side polished (100) crystalline silicon (c-Si) substrates by using radio-frequency annealed at 1000 ° C for 20 h under vacuum condition to obtain the nano-crystalline silicon (nc-Si) film. And then the a-Si, nc-Si films and crystalline silicon 6 MeV Bi-ions.