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采用甚高频等离子体增强化学气相沉积(VHF_PECVD)法,成功制备出从非晶到微晶过渡区域的硅薄膜.样品的微结构、光电特性及光致变化的测量结果表明这些处于相变域的硅薄膜兼具非晶硅优良的光电性质和微晶硅的稳定性.用这种两相结构的材料作为本征层制备了p_i_n太阳能电池,并测量了其稳定性.结果在AM1.5(100mW cm2)的光强下曝光800—5000min后,开路电压略有升高,转换效率仅衰退了2.9%.
The silicon thin film was successfully prepared from the amorphous to microcrystalline transition region by VHF-PECVD method.The microstructures, photoelectric properties and photoluminescence measurements of the samples show that these films are in the phase transition domain The silicon thin film combines the excellent optoelectronic properties of amorphous silicon and the stability of microcrystalline silicon.The p_i_n solar cell is prepared by using the two-phase structure as an intrinsic layer and its stability is measured.Results In AM1.5 (100mW cm2) light intensity exposure 800-5000min, the open circuit voltage slightly increased, the conversion efficiency declined only 2.9%.